Conference Publication
Rapid Preheating-Assisted Liquid-Medium Annealing for Efficient and Stable Perovskite Solar Cells
Author affiliations and roles
- 1Center for Sustainability and Energy Technologies, Chang Gung University, Taoyuan 33302, Taiwan
- 2Department of Chemical and Materials Engineering, National Central University, Taoyuan 32001, Taiwan
- 3Department of Chemical and Materials Engineering, Chang Gung University, Taoyuan 33302, Taiwan
- 4Division of Neonatology, Department of Pediatrics, Chang Gung Memorial Hospital, Taoyuan 33305, Taiwan
- 5College of Environment and Resources, Ming Chi University of Technology, New Taipei City 24301, Taiwan
4th International Conference on Smart Devices and Sustainable Energy (SDSE 2026) (2026).
Research topic: Perovskite Solar Cells
Conference information
Conference abstract
Conference dates: 2026-10-14 – 2026-10-16
New Taipei City, Taiwan
Presentation: Poster
Status: Accepted
Abstract no.: 00145
Presenting author: Wei-Hao Chiu
Abstract
Conventional hot-plate annealing of perovskite solar cells (PSCs) involves a substantial thermal budget and can produce spatially nonuniform crystallization and defect-rich interfaces. Here, a sequential crystallization and passivation route is introduced by combining rapid preheating, moderate-temperature liquid-medium annealing (LMA), and formamidinium bromide (FABr) surface treatment. Triple-cation perovskite films were preheated at 135 °C for 20 s to remove residual antisolvent and then annealed in anisole at 50 °C for only 3 min. This brief preheating step prevented the island-like domains observed when LMA was applied directly, promoted homogeneous nucleation, and yielded continuous films with enlarged grains, higher crystallinity, and spatially uniform photoluminescence. Subsequent FABr treatment suppressed defects at the perovskite/hole-transport-layer interface. Devices based on preheated LMA films achieved a champion power conversion efficiency (PCE) of 21.49%. After FABr passivation, the champion PCE increased to 22.01%, with an open-circuit voltage of 1.122 V, a short-circuit current density of 25.30 mA cm⁻², a fill factor of 77.13%, and a hysteresis index of 0.017. The complete process reduced the electron-trap density from 5.21 × 10¹⁵ cm⁻³ for the hot-plate-annealed reference to 3.20 × 10¹⁵ cm⁻³ and increased the average carrier lifetime from 55.08 to 122.78 ns. Under ISOS-D1 conditions (25 ± 5 °C and 50% ± 5% relative humidity), unencapsulated devices retained 94.5% of their initial PCE after 650 h, whereas the reference retained only 46.7%. These findings demonstrate that rapid solvent removal, uniform low-temperature crystallization, and interfacial defect passivation address complementary loss pathways, providing a short-duration and energy-efficient route toward efficient and durable PSCs.